物理学报2011，Vol.60Issue(9)：759-766,8.
SOI SONOS EEPROM总剂量辐照阈值退化机理研究
Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation
摘要
Abstract
Threshold voltage drift is one of the most important characteristics of device degradation. Based on the research of threshold drifts of the front and the back gate of SOI SONOS EEPROM, device degradation is studied in irradiation environment. Physical mechanism of threshold drifts is analyzed through physical band and mobile carrier analysis. And measures to improve device performance are proposed.关键词
SONOS/EEPROM/SOI/辐照/能带Key words
SONOS EEPROM/SOI/radiation/physical bands分类
信息技术与安全科学引用本文复制引用
李蕾蕾,于宗光,肖志强,周昕杰..SOI SONOS EEPROM总剂量辐照阈值退化机理研究[J].物理学报,2011,60(9):759-766,8.基金项目
极大规模集成电路制造装备及成套工艺国家科技重大专项（批准号：2009ZX02306-04）资助的课题 （）
