物理学报2011，Vol.60Issue(10)：679-685,7.
高性能透射式GaAs光电阴极量子效率拟合与结构研究
Research on quantum efficient fitting and structure of high performance transmission-mode GaAs photocathode
摘要
Abstract
To explore the structural feature of high performance transmission-mode GaAs photocathode,the optical properties and shortwave limitation for the transmission-mode quantum efficient formula is modified.By using the modified formula,a high quantum efficient（≈43%） curve of ITT is well fitted.A series of structural parameters is obtained with in a relative error less than 5%,which indicates that the thickness of the Ga1-xAlxAs window layer is 0.3—0.5 μm,the Al mole value is 0.7,and the thickness of the GaAs active layer is 1.1—1.4 μm.In addition,an optimized structure for the uniform-doping transmission-mode GaAs photocathode is suggested based on the fitted results.When the thickness of the Ga1-xAlxAs（x=0.7） layer and the GaAs layer are 0.4 μm and 1.1—1.5 μm respectively,the integral sensitivity can exceed 2350 μA/lm.关键词
透射式GaAs光电阴极/量子效率/积分灵敏度/光学性能Key words
transmission-mode GaAs photocathode/quantum efficient/integral sensitivity/optical properties分类
信息技术与安全科学引用本文复制引用
赵静,张益军,常本康,熊雅娟,张俊举,石峰,程宏昌,崔东旭..高性能透射式GaAs光电阴极量子效率拟合与结构研究[J].物理学报,2011,60(10):679-685,7.基金项目
国家自然科学基金 （）
江苏省普通高校研究生科研创新计划 （）
南京理工大学自主科研专项计划（批准号：2010ZYTS032）资助的课题 （）
