物理学报2011，Vol.60Issue(11)：489-493,5.
0.18μm MOSFET器件的总剂量辐照效应
Total ionizing dose effect of 0.18μm nMOSFETs
摘要
Abstract
A 0.18μm MOSFET with shallow trench isolation is exposed to a γ-ray radiation.The parameters such as off-state leakage current,threshold voltage,transconductance,gate leakage current,and subthreshold slope are analyzed for pre- and post-irradiation.By introducing constant sheet charges at the shallow trench isolation oxide sidewall,good agreement between 3D simulation and experiment result is demonstrated.We believe that the thin gate oxide is insensitive to radiation,and the radiation induced charge trapping in the shallow trench isolation still leads to macroscopic effects such as drain-to-source leakage current,ultimately limiting the tolerance of CMOS circuits.关键词
总剂量效应/浅沟槽隔离/氧化层陷阱正电荷/MOSFETKey words
total ionizing dose/shallow trench isolation/oxide trapped charge/MOSFET分类
信息技术与安全科学引用本文复制引用
刘张李,胡志远,张正选,邵华,宁冰旭,毕大炜,陈明,邹世昌..0.18μm MOSFET器件的总剂量辐照效应[J].物理学报,2011,60(11):489-493,5.基金项目
中国科学院微小卫星重点实验室开放基金资助的课题 （）
