物理学报2011，Vol.60Issue(11)：613-617,5.
非化学计量比靶材溅射制备Cu-Al-O薄膜的光学电学性质研究
Electrical and optical properties of Cu-Al-O thin films sputtered using non-stoichiometric target
摘要
Abstract
Taking account difference in sputtering rate between Cu and Al,we use a polycrystalline CuAlO2 target with a ratio between Cu and Al being 0.9∶1 to prepare the Cu-Al-O film by RF magnetron sputtering.The electrical and the optical properties of the thin film are influenced by the temperature of the substrate.When the substrate temperature is around 500℃,the film has a good transmission of 70% in the range of the visible light.Calculated by the fitted formula,the direct band gap is 3.52 eV,and it is in good agreement with the theoretical value.Near room temperature,the thin film conforms to the semiconductor thermal activation mechanism,when the substrate temperature is about 500℃,the film conductivity reaches 2.48×10-3 S·cm-1.关键词
Cu-Al-O/衬底温度/透过率/电导率Key words
Cu-Al-O thin films/substrate temperature/conductivity/transmittance分类
数理科学引用本文复制引用
潘佳奇,朱承泉,李育仁,兰伟,苏庆,刘雪芹,谢二庆..非化学计量比靶材溅射制备Cu-Al-O薄膜的光学电学性质研究[J].物理学报,2011,60(11):613-617,5.基金项目
国家自然科学基金（批准号：50802037）资助的课题 （）
