物理学报2011，Vol.60Issue(11)：730-734,5.
薄膜SOI上SiGe HBT集电结耗尽电荷和电容改进模型
Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI
摘要
Abstract
The SiGe heterojunction bipolar transistor （HBT） on thin film SOI is successfully integrated with SOI CMOS by ＂folded collector＂.This paper deals with the collector depletion charge and the capacitance of this structure.An optimized model is presented based on our previous research.The results show that the charge model is smoother,and that the capacitance model with considering different current flow areas,is vertical and horizontal depletion capacitances in series,showing that the depletion capacitance is smaller than that of a bulk HBT.The charge and capacitance vary with the increase of reverse collector-base bias.This collector depletion charge and capacitance model provides valuable reference to the SOI SiGe HBT electrical parameters design and simulation such as Early voltage and transit frequency in the latest 0.13μm SOI BiCMOS technology.关键词
耗尽电容/SiGe/HBT/SOIKey words
depletion capacitance/SiGe HBT/SOI分类
信息技术与安全科学引用本文复制引用
徐小波,张鹤鸣,胡辉勇..薄膜SOI上SiGe HBT集电结耗尽电荷和电容改进模型[J].物理学报,2011,60(11):730-734,5.基金项目
国家部委资助项目 （）
中央高校基本科研业务费 （）
陕西省自然科学基础研究计划（批准号：2010JQ8008）资助的课题 （）
