物理学报2011，Vol.60Issue(12)：583-589,7.
GaN真空面电子源光电发射机理研究
Photoemission mechanism of GaN vacuum surface electron source
摘要
Abstract
GaN photocathode is fully activated by employing a continuous Cs source and an alternate O source.The quantum efficiency curve of transmission-mode photocathode is tested in situ.The quantum efficiency reaches up to 13% in transmission-mode.According to the one-dimensional Schrdinger equation,the electron transmission coefficient formula of GaN vacuum electron source material is deduced.For a certain profile of photocathode surface potential barrier,the electron transmission coefficient relates to the incident electron energy,the height and the width of the surface potential.The energy band of transmission-mode negative electron affinity （NEA） GaN photocathode and the change of surface barrier in the deposit course of Cs,O are given.Using the double dipole layer surface model GaN（Mg）：Cs：O-Cs,the NEA property formation of GaN vacuum electron source material is analyzed.The results show that the double dipole layer formed in the activation course of Cs,O is conducible to the escape of electrons,and it is the formation of double dipole layer that causes the drop of vacuum energy level of the material surface.关键词
GaN/电子源/透射系数/双偶极层Key words
GaN/electron source/transmission coefficient/double dipole layer分类
信息技术与安全科学引用本文复制引用
乔建良,常本康,钱芸生,王晓晖,李飙,徐源..GaN真空面电子源光电发射机理研究[J].物理学报,2011,60(12):583-589,7.基金项目
国家自然科学基金 （）
中国博士后科学基金（批准号：2011M500925）资助的课题 （）
