物理学报2012，Vol.61Issue(1)：379-385,7.
离子束溅射Ge量子点的应变调制生长
Underlying strain-induced growth of the self-assembled Ge quantum-dots prepared by ion beam sputtering deposition
摘要
Abstract
The quantum-dot samples with single Ge layer and twofold stacked Ge layers are prepared by ion beam sputtering deposition. The different sizes and morphologies of quantum-dots are characterized using atomic force microscope technique.The effects of strain from the capped Ge quantum-dots on the upper Ge wetting layer and the nucleation are also investigated by the buried strain model. The results show that the non-uniform strain in the Si spacing layer which caps the buried quantum-dot layer,leads to the decrease of Ge critical thickness in the upper layer,which increases the upper dot size.The strain intensity increases with the decrease of Si spacer thickness,which results in the changes of dot shape and size in the upper layer.Furthermore,the strain also modulates the distribution of upper quantum-dot layer.关键词
Ge量子点/埋层应变/离子束溅射Key words
Ge quantum dots/strain/ion beam sputtering分类
数理科学引用本文复制引用
杨杰,王茺,靳映霞,李亮,陶东平,杨宇..离子束溅射Ge量子点的应变调制生长[J].物理学报,2012,61(1):379-385,7.基金项目
国家自然科学基金（批准号：10964016 （）
10990103） （）
云南省社会发展自然基金 （）
教育部科学技术研究重点项目 （）
云南大学校基金（批准号：2010YB030）资助的课题~~ （）
