物理学报2012，Vol.61Issue(1)：504-511,8.
带介质分布式Bragg反射镜结构高性能共振腔发光二极管的研究
High performance resonant cavity light emitting diode with dielectric distributed Bragg reflectors
摘要
Abstract
Dielectric distributed Bragg reflectors（DDBRs） with SiO_2/Si_3N_4 are grown by PECVD alternately.For the etching of DDBR, dry and wet etching methods are both used.The reflectivity of DDBR is calculated by transfer matrix method,and the high performance DDBR structure is fabricated to obtain optimal reliability,we find that the enhancement factor along the cavity axis and the integrated emission enhancement factor of RCLED with 1.5 RC DDBR are 1.058 and 1.5 respectively,a full width at half maximum is 10.5 nm by PL analysis.Then,high performance RCLEDs are fabricated by using an optimal DDBR structure.The devices with DDBR show many advantages：a lower turn-on voltage of 1.78 V,under 20 mA injection current,the output power and the luminous efficiency of the device with/without DDBR gain the improvements of 27.7%and 26.8%respectively,under 0-100 mA injection current,the output power has unconspicuous downtrend,better characteristic saturation of optical power and temperature stability.关键词
发光二极管/共振腔/介质分布式布拉格反射镜/辐射增强Key words
light emitting diode/resonant cavity/dielectric distributed Bragg reflectors/enhanced emission intensity分类
数理科学引用本文复制引用
汤益丹,沈光地,郭霞,关宝璐,蒋文静,韩金茹..带介质分布式Bragg反射镜结构高性能共振腔发光二极管的研究[J].物理学报,2012,61(1):504-511,8.基金项目
国家高技术研究发展计划（863计划） （）
国家重点基础研究发展计划（973计划）（批准号：2006CB604902）资助的课题~~ （）
