物理学报2012，Vol.61Issue(2)：417-421,5.
HgCdTe反型层的磁输运性质
Magnetotransport property of HgCdTe inversion layer
摘要
Abstract
HgCdTe-based metal-insulator-semiconductor field effect transistor is fabricated by low-cost liquid phase epitaxy technique. Clear SdH oscillation inρ_（xx） and quantum Hall plateaus ofρ_（xy） are observed,indicating that it is a good transistor.By measuring the magnetoresistance near zero field,we observe the weak antilocalization effect in our sample,suggesting a relatively strong spinorbit coupling.The experimental data can be well fitted by the ILP theory.The fitting-obtained spin-splitting energy increases with increasing electron concentration,and the maximum reaches up to 9.06 meV.From the obtained spin-splitting energy,we calculate the spin-orbit coupling parameter and find that it increases with increasing electron concentration,which is contrary to the observations in a wide quantum well.关键词
二维电子气/HgCdTe/反弱局域效应Key words
two-dimensional electron gas/HgCdTe/weak antilocalization effect分类
信息技术与安全科学引用本文复制引用
高矿红,褚君浩,魏来明,俞国林,杨睿,林铁,魏彦锋,杨建荣,孙雷,戴宁..HgCdTe反型层的磁输运性质[J].物理学报,2012,61(2):417-421,5.基金项目
国家重点基础研究发展计划 （）
国家自然科学基金 （）
中国博士后科学基金 （）
上海技物所创新专项 （）
上海科委基金（批准号：09JC1415700）资助的课题~~ （）
