物理学报2012，Vol.61Issue(2)：499-508,10.
利用等离子体辅助脉冲磁控溅射实现多晶硅薄膜的低温沉积
Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering
摘要
Abstract
Hydrogenated poly-crystalline silicon thin films are deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering at a temperature below 300℃.The samples are characterized by X-ray diffraction,Raman scattering,transmission electron microscopy,and Fourier transform infrared spectroscopy.The relationship between hydrogen dilution ratio and the characteristic of thin film is studied systematically.The mechanism of crystallization is discussed on the basis of the results of diagnosis of plasma by Langmuir probe and optical emission spectra.关键词
多晶硅薄膜/电感耦合等离子体/磁控溅射/拉曼散射Key words
poly-Si thin films/inductively coupled plasma/magnetron sputtering/Raman scattering分类
数理科学引用本文复制引用
苏元军,徐军,朱明,范鹏辉,董闯..利用等离子体辅助脉冲磁控溅射实现多晶硅薄膜的低温沉积[J].物理学报,2012,61(2):499-508,10.基金项目
教育部科技创新工程重大项目培育资金项目 （）
辽宁省高等学校创新团队支持计划资助的课题~~ （）
