西安理工大学学报2011，Vol.27Issue(4)：407-410,4.
GaAs光电导开关非线性锁定效应的机理研究
Lock-on Mechanism in Nonlinear Mode of Photoconductive Switches
摘要
Abstract
According to photo-activated charge domain model, the transient transport processes of hot e-lectrons and the nature of carriers-lattice interaction in the semi-insulating GaAs photoconductive switches with an ultrahigh electric fields is discussed; and the processes of producing and growth and achieved stable equilibrium state on photo-activated monopole domain is analyzed in details. The results indicate that the Lock-on effect in nonlinear mode of photoconductive switches is a stable equilibrium state of photo-activated charge domain (monopole domain) , and simultaneously there are the strong local impact ionization and radiative recombination effect of hot electrons in the ultrahigh electric field internal and front-end of the monopole domain, where by making carriers "avalanche" quickly in multiplication and output electric pulse rising rapidly, the ultrahigh electric field appears near the anode region of GaAs photoconductive switches and strong impact ionization and radiative recombination of the hot electrons will occur so as to form current filaments.关键词
光电导开关/锁定效应/光激发单极电荷畴/非平衡载流子Key words
photoconductive switches/ lock-on effect/ photo-activated monopole domain/ non-equilibrium carriers分类
信息技术与安全科学引用本文复制引用
薛红,施卫,纪卫莉,韩小卫..GaAs光电导开关非线性锁定效应的机理研究[J].西安理工大学学报,2011,27(4):407-410,4.基金项目
国家重点基础研究发展计划(973计划)资助项目(2007CB310406) （973计划）
国家自然科学基金资助项目(50837005,10876026). （50837005,10876026）
