发光学报2012，Vol.33Issue(4)：400-403,4.DOI:10.3788/fgxb20123304.0400
N2O Plasma表面处理对SiNx基IGZO-TFT性能的影响
Effect of N2O Plasma Treatment on The SiNx-based InGaZnO Thin Film Transistors
摘要
Abstract
Indium-gallium-zinc oxide thin film transistor (IGZO-TFT) was fabricated using N2O plasma treated SiNx film as gate insulator and room-temperature deposited IGZO film as active layer. Comparing with the conventional IGZO-TFT, the saturation mobility increased from 4.5 to 8.1cm2 ? V -1? S-1 , threshold voltage reduced from 11.5 to 3. 2 V, threshold swing varied from 1. 25 to 0. 9 V/dec. The trap states in the N2O plasma treated IGZO-TFT is obviously smaller than that in the conventional IGZO-TFT. Our results indicate that using N2O plasma treated SiNx film as gate insulator is an effective approach for improving IGZO-TFT performance.关键词
薄膜晶体管/InGaZnO/plasma处理/N2OKey words
thin-film transistor/InGaZnO/plasma treatment/N2O分类
信息技术与安全科学引用本文复制引用
李俊,周帆,林华平,张浩,张建华,蒋雪茵,张志林..N2O Plasma表面处理对SiNx基IGZO-TFT性能的影响[J].发光学报,2012,33(4):400-403,4.基金项目
国家863计划(2010AA03A337) （2010AA03A337）
国家自然科学基金(61077013) （61077013）
中国博士后基金(2011 M500569)资助项目 （2011 M500569）
