发光学报2012，Vol.33Issue(4)：417-421,5.DOI:10.3788/fgxb20123304.0417
H掺杂对ZnCoO稀磁半导体薄膜结构及磁性能的影响
Effect of H Doping on The Structural and Magnetic Properties in ZnCoO Diluted Magnetic Semiconductor Thin Films
摘要
Abstract
H: ZCO thin films were prepared with different qv (H2): qv ( Ar + H2) by using submole-cule doping technique, where the magnetic sputtering of Co and ZnO were alternatively performed onto silicon substrates. The effect of qv ( H2) : qv (Ar + H2) on the structural and magnetic properties in films was investigated. All the prepared thin films have a c-axis preferential orientation, and the intensity of ( 002 ) diffraction peak decreases with the increase of qv ( H2): qv (Ar + H2) in films because the doping hydrogen can passivate the dangling bonds at the surfaces and grain boundaries. Magnetic measurement shows that the ferromagnetism is enhanced with the qv ( H2): qv (Ar + H2) increasing. XPS results exhibit that the relative content of Co metal clusters gradually increases, and the relative content of oxidized Co ions gradually decreases with the increase of H2 ratio. According to the above results, it is suggested that the ferromagnetism in H: ZCO thin film originates from Co metal clusters, and more oxidized Co ions is reduced to Co metal clusters with H2 doping, therefore the ferromagnetism is enhanced.关键词
磁控溅射法/ZnCoO稀磁半导体/H掺杂/Co金属团簇Key words
magnetron sputtering method/ZnCoO diluted magnetic semiconductor/H doping/Co metal clusters分类
数理科学引用本文复制引用
叶展通,朱德亮,马晓翠,吕有明,柳文军,曹培江,贾芳..H掺杂对ZnCoO稀磁半导体薄膜结构及磁性能的影响[J].发光学报,2012,33(4):417-421,5.基金项目
国家自然科学基金(60976036) （60976036）
广东省千百十工程项目 （）
深圳市科技计划项目 （）
深圳市特种功能材料重点实验室开放基金(T0901,T201101)资助项目 （T0901,T201101）
