发光学报2012，Vol.33Issue(4)：444-448,5.DOI:10.3788/fgxb20123304.0444
标准CMOS工艺载流子注入型三端Si-LED的设计与研制
Design and Fabrication of Three-terminal Carrier-injection-type Si-LED with Standard CMOS Technology
摘要
Abstract
This paper demonstrates a novel carrier-injection-type silicon based light emitting device ( LED) with three terminals and high light emission intensity. The device was designed and fabricated in the commercial standard 0. 5 μm CMOS process offered by Central Semiconductor Manufacturing Corporation ( CSMC) without any modification. Two shallow diagonal n + p junctions were embedded on the p type substrate. One junction biased in forward mode emits infrared light, and the other is also forward biased to inject carriers into the light emitting region. Experiment results show that, at 10 Ma biased current and 3 V modulation voltage, 1 Nw optical power can be obtained and it's approximately two orders of magnitude higher than the single junction. Due to the low operating voltage, the device can be monolithic integrated with the current mainstream silicon CMOS technology and shows a great potential in optoelectronic integration field.关键词
硅基LED/标准CMOS/发光器件/正向注入发光/光电集成Key words
Si-LED/standard CMOS/light emitting device/carrier injection/OEIC分类
信息技术与安全科学引用本文复制引用
韩磊,张世林,郭维廉,毛陆虹,谢生,张兴杰,谷晓..标准CMOS工艺载流子注入型三端Si-LED的设计与研制[J].发光学报,2012,33(4):444-448,5.基金项目
国家自然科学基金重点项目(61036002)资助项目 （61036002）
