摘要
Abstract
Novolak-diazonaphthoquinone photoresists have been widely used in g-line,,I-line lithography for its high performance. Although g-line and I-line photoresists are both consisted of novolak resin and diazonaphthoquinone photoactive compounds,in order to fit I-line exposure wavelength and seeking for higher resolution,novolak resin and photoactive compounds(PAC) both have difference in structure from g-line to I-line. In I-line resist,the o-o'bonding content of resin is higher,the esterfication of PAC is higher,the proximity of DNQ groups is distant. Dissolution promoter is an important component of I-line resists,some phenolic additives were very useful to control the dissolution behavior.关键词
i-line/光刻胶/酚醛树脂/感光剂/溶解促进剂Key words
I-line/photoresist/novolak/photoactive compounds/dissolution promoter分类
化学化工
