量子电子学报2012，Vol.29Issue(1)：96-100,5.DOI:10.3969/j.issn.1007-5461.2012.01.016
外加交变电场情况下屏蔽明孤子自偏换特性研究
Self-deflection of screening bright soliton in photorefractive crystal applied alternating electric field
摘要
Abstract
Self-deflection characteristics of screening bright soliton in photorefractive crystal applied alternating electric field were discussed by perturbation method. This soliton is formed in the crystal when the direction of effective electric field of alternating electric field is along with crystal axis, while the self-deflection of the soliton orients the direction opposite crystal axis. Moreover, the deflection distance of the soliton center moving along a parabolic trajectory is proportional to the modulation degree of light intensity and third power of alternating electric field, respectively. It is worth to mention that this distance reaches maximum value for the ratio of center light intensity of soliton to the dark radiation intensity up to 10. Besides, the spatial frequencies of soliton center, along with self-deflection, transfer from the lower components of the spectrum into the higher components linearly, resulting in change for amplitude distribution of soliton in which the slope of the curve gets larger in deflection direction and smaller for the opposite.关键词
非线性光学/自偏转/微扰法/屏蔽明孤子/交变电场Key words
nonlinear optics/self-deflection/perturbation method/screening bright soliton/alternating electric field分类
数理科学引用本文复制引用
忽满利,李文慧,马志博,种兰祥,廖春艳..外加交变电场情况下屏蔽明孤子自偏换特性研究[J].量子电子学报,2012,29(1):96-100,5.基金项目
国家自然科学基金项目(61077006)资助课题 （61077006）
