| 注册
首页|期刊导航|人工晶体学报|硫化时间对CuInS2薄膜微结构的影响

硫化时间对CuInS2薄膜微结构的影响

夏冬林 徐俊 刘俊 雷盼

人工晶体学报2012,Vol.41Issue(1):20-23,4.
人工晶体学报2012,Vol.41Issue(1):20-23,4.

硫化时间对CuInS2薄膜微结构的影响

Effects of Sulfurization Time on Microstructure of CuInS2 Films

夏冬林 1徐俊 1刘俊 1雷盼1

作者信息

  • 1. 硅酸盐建筑材料国家重点实验室(武汉理工大学),武汉 430070
  • 折叠

摘要

Abstract

Copper indium disulfide thin films were prepared on Mo-coated glass substrates by sulfurization treatment in N2 atmosphere of the Cu-In metallic precursors deposited by magnetron sputtering. The effects of sulfurization time on the surface morphology and microstructures of the resulting thin films were investigated. The microstructures of CuInS2 absorber films were characterized by field emission scanning electron microscopy ( FE-SEM), X-ray diffraction ( XRD) and Raman spectror-copy. The results indicated that with proper sulfurization time the resulting CuInS2 thin films have chalcopyrite structure, the grains morphology evolves from spherical structure into sheet structure, the crystallinity of the CuInS2 films gets better with the increase of sulfurization time. However, the Cu-Au phase occurs in the films treated for too long time, making the films quality worse.

关键词

磁控溅射/CuInS2薄膜/固态源硫化法/微观结构

Key words

magnetron sputtering/CuInS2 thin film/solid-state sulfurization/microstructure

分类

数理科学

引用本文复制引用

夏冬林,徐俊,刘俊,雷盼..硫化时间对CuInS2薄膜微结构的影响[J].人工晶体学报,2012,41(1):20-23,4.

基金项目

国家自然科学基金重点项目(No.51032005) (No.51032005)

材料复合新技术国家重点实验室(武汉理工大学)开放基金 (武汉理工大学)

人工晶体学报

OA北大核心CSCDCSTPCD

1000-985X

访问量0
|
下载量0
段落导航相关论文