人工晶体学报2012，Vol.41Issue(1)：74-78,5.
溶剂热法制备Al掺杂ZnO薄膜的机理研究
Study on Growth Mechanism of Al Doped ZnO Films Prepared by Solvothermal Method
摘要
Abstract
Aluminum doped zinc oxide (AZO) films were prepared by solvothermal method on glass substrates. The effects of heating, temperature holding and cooling stages on the phase and morphology of AZO films were investigated. The growth mechanism of AZO films was studied. The results indicated that only nucleation takes place at heating stage. There was no film deposited when the substrates contacted with precursor only at heating stage. AZO films obtained on the substrates contacting with precursor at both heating and temperature holding stages show (002) preferred orientation. Both nucleation and crystal growth take place at temperature holding stage. AZO films can be deposited on the substrates contacting with precursor only at temperature holding stage. AZO films continue slowly to grow at cooling stage.关键词
ZnO薄膜/Al掺杂/溶剂热/机理Key words
ZnO film/Al-doped/solvothermal/mechanism分类
数理科学引用本文复制引用
马振辉,谷景华,张跃..溶剂热法制备Al掺杂ZnO薄膜的机理研究[J].人工晶体学报,2012,41(1):74-78,5.基金项目
中央高校基本科研业务费专项资金资助 （）
