人工晶体学报2012，Vol.41Issue(1)：188-192,5.
外加氩气流下脉冲激光烧蚀制备纳米硅晶粒成核生长动力学研究
Dynamics of Nucleation and Growth of Si Nanocrystal Grains Prepared by Pulsed Laser Ablation with Extra Ar Gas Flow
摘要
Abstract
In order to study dynamics of nucleation and growth of nanocrystal grains, the silicon crystal thin films were deposited on horizontal substrate by pulsed laser ablation through introducing extra gas flow that vertical to plume axis at room temperature, pressure of Ar was 50-200 Pa. Results of SEM, Raman and XRD indicated the size of grains deposited on the same position of substrates decrease gradually as gas pressure increasing without gas flow. After the gas flow was introduced at 1-2 cm apart from target, the variation law of grains'size was contrary. Based on analyzing the size and distribution position of grains on substrates, when laser fluence is constant, nucleation and growth of grains are common effected by gas pressure, temperature and density of ablated atoms combining with hydrodynamics model and thermokinetic equation.关键词
脉冲激光烧蚀/硅纳米晶粒/外加气流/成核生长动力学Key words
pulsed laser ablation/Si nanocrystal grain/extra gas flow/dynamics of nucleation and growth分类
信息技术与安全科学引用本文复制引用
邓泽超,王世俊,丁学成,褚立志,梁伟华,赵亚军,陈金忠,傅广生,王英龙..外加氩气流下脉冲激光烧蚀制备纳米硅晶粒成核生长动力学研究[J].人工晶体学报,2012,41(1):188-192,5.基金项目
973计划前期研究专项(2011 CB612305) （2011 CB612305）
河北省自然科学基金(E2008000631,E2011201134) （E2008000631,E2011201134）
河北省教育厅基金(2009308)资助课题 （2009308）
