信息与电子工程2011，Vol.9Issue(6)：774-777,4.
SOI CMOS SRAM单元单粒子翻转效应的模拟
Circuit simulation of SEU for SOI CMOS SRAM cells
李振涛 1于芳 1刘忠立 2赵凯 1高见头 2杨波 1李宁2
作者信息
- 1. 中国科学院半导体研究所,北京100083
- 2. 传感器技术国家重点实验室,北京100190
- 折叠
摘要
Abstract
For the purpose of simulating the Single Event Upset(SEU) of a Static Random Access Memory(SRAM) cell fast and simply, a classical double exponential expression of a transient current pulse in a single event effect is confirmed by numerical optimization of results from 2-D device numerical simulation. An amended equation that gives the relationship between transistor bias voltage and transient current is derived by theoretical analysis. This equation can be used to simulate the SEU of a SRAM cell in the circuit simulation tool HSPICE. Finally, the practicability of this method is verified by the comparison with the result of SEU experiment.关键词
单粒子翻转/双指数模型/器件模拟/部分耗尽绝缘体上硅/静态随机存储器Key words
Single Event Upset/double exponential model/circuit simulation/partially depleted Silicon On Insulator/Static Random Access Memory分类
信息技术与安全科学引用本文复制引用
李振涛,于芳,刘忠立,赵凯,高见头,杨波,李宁..SOI CMOS SRAM单元单粒子翻转效应的模拟[J].信息与电子工程,2011,9(6):774-777,4.
