半导体学报2012，Vol.33Issue(3)：5-7,3.DOI:10.1088/1674-4926/33/3/032001
Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation
Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation
摘要
Abstract
HfO2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N(C2H5)(CH3)]4 and H2O2.A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing.The composition,the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment.With a nitrogen concentration increase from 1.41 to 7.45％,the bandgap of the films decreased from 5.82 to 4.94 eV.关键词
atomic layer deposition/HfO2/rapid thermal annealing/optical propertyKey words
atomic layer deposition/HfO2/rapid thermal annealing/optical property引用本文复制引用
Li Ye,Jiang Tingting,Sun Qingqing,Wang Pengfei,Ding Shijin,Zhang Wei..Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation[J].半导体学报,2012,33(3):5-7,3.基金项目
Project supported by the National Natural Science Foundation of China (Nos.61076114,61106108),the Shanghai Educational Develop Foundation,China (No.10CG04),the SRFDP (No.20100071120027),and the Fundamental Research Funds for the Central Universities and the S&T Committee of Shanghai,China (No.1052070420). （Nos.61076114,61106108）
