A novel high speed lateral IGBT with a self-driven second gateOACSCDCSTPCD
A novel high speed lateral IGBT with a self-driven second gate
A novel lateral IGBT with a second gate on the emitter portion is presented.A PMOS transistor,driven by the proposed device itself,is used to short the PN junction at the emitter while turned off.Low on state voltage and fast turn off speed are obtained without side-effects such as snapback I-V characteristics and difficulties of process complexity.Numerical simulation results show a drop of fall time from 120 to 12 ns and no increase of on state voltage.
Hu Hao;Chen Xingbi
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
lateral IGBTsecond gatehigh speed
lateral IGBTsecond gatehigh speed
《半导体学报》 2012 (3)
28-31,4
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