A physical surface-potential-based drain current model for polysilicon thin-film transistorsOACSCDCSTPCD
A physical surface-potential-based drain current model for polysilicon thin-film transistors
A physical drain current model of polysilicon thin-film transistors based on the charge-sheet model,the density of trap states and surface potential is proposed.The model uses non-iterative calculations,which are single-piece and valid in all operation regions above flat-band voltage.The distribution of the trap states,including both Gaussian deep-level states and exponential band-tail states,is also taken into account,and parameter extraction of trap …查看全部>>
Li Xiyue;Deng Wanling;Huang Junkai
Department of Electronic Engineering, Jinan University, Guangzhou 510632, ChinaDepartment of Electronic Engineering, Jinan University, Guangzhou 510632, ChinaDepartment of Electronic Engineering, Jinan University, Guangzhou 510632, China
polysilicon thin-film transistorssurface potentialdrain current modeltrap state distribution
polysilicon thin-film transistorssurface potentialdrain current modeltrap state distribution
《半导体学报》 2012 (3)
32-37,6
Project supported by the Key Project of Chinese Ministry of Education (No.211206),the Fundamental Research Funds for the Central Universities (No.21611422),and the Foundation for Distinguished Young Talents in Higher Education of Guangdong,China (No.LYM10032).
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