半导体学报（英文版）2012，Vol.33Issue(4)：17-22,6.DOI:10.1088/1674-4926/33/4/043002
Nanoindentation study of a Cu/Ta/SiO2/Si multilayer system
Nanoindentation study of a Cu/Ta/SiO2/Si multilayer system
摘要
Abstract
Tantalum and copper layers were deposited on a thermally oxidized Si substrate in a magnetron sputtering process.Nanoindentation was adopted to investigate the hardness and elastic modulus of the Cu/Ta/SiO2/Si multilayer system.The hardness shows an apparent dependence on the film thickness,and decreases with the increase of film thickness,whereas the elastic modulus does not.To reveal the structural change,a trench through the center of a residual indent was cut by a focused ion beam,and then examined using an ion-microscope.TEM analysis showed that delamination occurs at the interface between the Ta and the SiO2 layer of the residual indent,suggesting that the destruction under a relatively large load is due to weak bonding.关键词
copper/tantalum/nanoindentation/hardness/elastic modulusKey words
copper/tantalum/nanoindentation/hardness/elastic modulus引用本文复制引用
Zhang Xin,Lu Qian,Wu Zijing,Wu Xiaojing,Shen Weidian,Jiang Bin..Nanoindentation study of a Cu/Ta/SiO2/Si multilayer system[J].半导体学报（英文版）,2012,33(4):17-22,6.基金项目
Project supported by the Science and Technology Commission of Shanghai Municipality,China (No.0552nm049) and the Shanghai Leading Academic Discipline Project,China (No.B113). （No.0552nm049）
