Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopyOACSCDCSTPCD
Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy
Channel temperature determinations of AlGaN/GaN high electron mobility transistors (HEMTs) by high spectral resolution micro-Raman spectroscopy are proposed.The temperature dependence of the E2 phonon frequency of GaN material is calibrated by using a JYT-64000 micro-Raman system.By using the Lorentz fitting method,the measurement uncertainty for the Raman phonon frequency of ±0.035 cm-1 is achieved,corresponding to a temperature accuracy of ±3.2 ℃ for GaN m…查看全部>>
Zhang Guangchen;Feng Shiwei;Li Jingwan;Zhao Yan;Guo Chunsheng
School of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, ChinaSchool of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, ChinaSchool of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, ChinaInstitute of Laser Engineering, Beijing University of Technology, Beijing 100124, ChinaSchool of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124, China
HEMTchannel temperaturemicro-Raman spectroscopy
HEMTchannel temperaturemicro-Raman spectroscopy
《半导体学报（英文版）》 2012 (4)
42-46,5
Project supported by the Beijing Municipal Nature Science Fund,China (No.4092005),the High-Tech Research and Development Program of China (No.2009AA32704),and the Research Fund for Doctoral Program of Ministry of Education,China (No.20091103110006).
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