High-temperature(T =80 ℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laserOACSCDCSTPCD
High-temperature(T =80 ℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laser
An InGaSb/AlGaAsSb compressively strained quantum well laser emitting at 2 μm has been fabricated.An output power of 82.2 mW was obtained in continuous wave (CW) mode at room temperature.The laser can operate at high temperature (T =80 ℃),with a maximum output power of 63.7 mW in CW mode.
Zhang Yu;Wang Yongbin;Xu Yingqiang;Xu Yun;Niu Zhichuan;Song Guofeng
Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaNano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaNational Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, ChinaNano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaNational Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, ChinaNano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
InGaSb/AlGaAsSblaserhigh-temperature operation
InGaSb/AlGaAsSblaserhigh-temperature operation
《半导体学报（英文版）》 2012 (4)
57-58,2
Project supported by the Beijing Natural Science Foundation,China (No.4112058) and the Science Foundation of the Chinese Academy of Sciences (No.CXJJ-11-M20).
评论