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High-temperature(T =80 ℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laser

Zhang Yu Wang Yongbin Xu Yingqiang Xu Yun Niu Zhichuan Song Guofeng

半导体学报（英文版）2012，Vol.33Issue(4)：57-58,2.

半导体学报（英文版）2012，Vol.33Issue(4)：57-58,2.DOI:10.1088/1674-4926/33/4/044006

High-temperature(T =80 ℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laser

Zhang Yu ¹Wang Yongbin ¹Xu Yingqiang ²Xu Yun ¹Niu Zhichuan ²Song Guofeng¹

作者信息

1. Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. National Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China
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摘要

Abstract

An InGaSb/AlGaAsSb compressively strained quantum well laser emitting at 2 μm has been fabricated.An output power of 82.2 mW was obtained in continuous wave (CW) mode at room temperature.The laser can operate at high temperature (T =80 ℃),with a maximum output power of 63.7 mW in CW mode.

关键词

InGaSb/AlGaAsSb/laser/high-temperature operation

Key words

InGaSb/AlGaAsSb/laser/high-temperature operation

引用本文复制引用

Zhang Yu,Wang Yongbin,Xu Yingqiang,Xu Yun,Niu Zhichuan,Song Guofeng..High-temperature(T =80 ℃) operation of a 2 μm InGaSb-AlGaAsSb quantum well laser[J].半导体学报（英文版）,2012,33(4):57-58,2.

基金项目

Project supported by the Beijing Natural Science Foundation,China (No.4112058) and the Science Foundation of the Chinese Academy of Sciences (No.CXJJ-11-M20). （No.4112058）

半导体学报（英文版）

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ISSN：1674-4926

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