半导体学报（英文版）2012，Vol.33Issue(4)：64-68,5.DOI:10.1088/1674-4926/33/4/044008
Influence of drain and substrate bias on the TID effect for deep submicron technology devices
Influence of drain and substrate bias on the TID effect for deep submicron technology devices
Huang Huixiang 1Liu Zhangli 2Hu Zhiyuan 1Zhang Zhengxuan 2Chen Ming 1Bi Dawei 2Zou Shichang1
作者信息
- 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China
- 2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
- 折叠
摘要
Abstract
This paper presents a study of the total ionization effects of a 0.18μm technology.The electrical parameters of NMOSFETs were monitored before and after irradiation with 60Co at several dose levels under different drain and substrate biases.Key parameters such as off-state leakage current and threshold voltage shift were studied to reflect the ionizing radiation tolerance,and explained using a parasitic transistors model.3D device simulation was conducted to provide a better understanding of the dependence of device characteristics on drain and substrate biases.关键词
parasitic transistor/swallow trench isolation/total ionizing dose/off-state leakageKey words
parasitic transistor/swallow trench isolation/total ionizing dose/off-state leakage引用本文复制引用
Huang Huixiang,Liu Zhangli,Hu Zhiyuan,Zhang Zhengxuan,Chen Ming,Bi Dawei,Zou Shichang..Influence of drain and substrate bias on the TID effect for deep submicron technology devices[J].半导体学报（英文版）,2012,33(4):64-68,5.
