首页|期刊导航|半导体学报（英文版）|Dependence of transient performance on potential distribution in a static induction thyristor channel
半导体学报（英文版）2012，Vol.33Issue(4)：69-74,6.DOI:10.1088/1674-4926/33/4/044009
Dependence of transient performance on potential distribution in a static induction thyristor channel
Dependence of transient performance on potential distribution in a static induction thyristor channel
摘要
Abstract
The impact of potential barrier distribution on the transient performance of a static induction thyristor (SITH) in a channel determined by geometrical parameters and applied bias voltage is studied theoretically and experimentally.The analytical expressions of potential barrier height and the Ⅰ-Ⅴ characteristics of the SITH are also derived.The main factors that influence the transient performance of the SITH between the blocking and conducting states,as well as the mechanism underlying the transient process,is thoroughly investigated.This is useful in designing,fabricating,optimizing and applying SITHs properly.关键词
static induction thyristor/potential barrier/transient performance/blocking state/conducting stateKey words
static induction thyristor/potential barrier/transient performance/blocking state/conducting state引用本文复制引用
Liu Chunjuan,Liu Su,Bai Yajie..Dependence of transient performance on potential distribution in a static induction thyristor channel[J].半导体学报（英文版）,2012,33(4):69-74,6.基金项目
Project supported by the Scientific and Technological Supporting Program of Gansu Province,China (No.097GKCA052). （No.097GKCA052）
