材料科学与工程学报2011，Vol.29Issue(6)：860-863,4.
Si（100）预结构基底对Si雕塑薄膜三维模拟生长的影响
Effect of Pre-structured Substrate on Sculptured Thin Film Growth of Si on Si（100）
摘要
Abstract
A three-dimensional Monte Carlo model for simulating sculptured thin-film growth of Si on Si（100） was presented.Basing on the PVD experimental condition and considering the shadow effect of periodical substrate,we simulated the topographies on the substrates with different seed widths（d）,different distances between two nearest seeds（S）,and different incident angles.The results reveal that at a given seed width and deposition angle,there is an optimum ratio of S/d which makes the surface roughness minimum.When seed width is greater than a certain value the surface roughness increases with the increase of the ratio.At a given periodical substrate,as the incident angle increases,the surface roughness increases,and the relative density curve becomes flatter.关键词
雕塑薄膜/蒙特卡罗模型/预结构/表面粗糙度/相对密度Key words
sculptured thin-film/Monte Carlo model/pre-structured substrate/surface roughness/relative density分类
数理科学引用本文复制引用
梁景舒,陈子毅,余梦影,江绍基..Si（100）预结构基底对Si雕塑薄膜三维模拟生长的影响[J].材料科学与工程学报,2011,29(6):860-863,4.基金项目
国家自然科学基金资助项目 （）
