材料科学与工程学报2012，Vol.30Issue(1)：63-70,101,9.
Zn-Sn-O系统透明导电薄膜的制备及其性能
Preparation and Transparent and Conductive Properties of Zn-Sn-O System Crystalline Films
摘要
Abstract
The Zn-Sn-O system thin films were prepared by sol-gel process and spin coating technique on silica glasses and then sintered.The reaction of dry gel during sintering was characterized by themogravimetry-differential scanning calorimetry（TG-DSC） and X-ray diffractometry（XRD）.Relatively pure Zn2SnO4 crystalline films and ZnSnO3 crystalline films were gained by controlling the content of components in the sol and the sintering temperature.The resistivity measurements suggest that ZnSnO3 crystal has a lower resistivity than Zn2SnO4.The resistivity of ZnSnO3 film increases after the treatment in N2 while the Zn2SnO4 film decreases sharply.For ZnSnO3 films,a lower resistivity（about 8.0×102Ω·cm-1） is obtained when / is equal to 50.3at%.The X-ray photoelectron spectroscopy（XPS） results show that the oxygen vacancies in Zn2SnO4 lattice were benefit for a lower resistivity while the interstitial cations in ZnSnO3 lattice might be good for resistivity decreasing.The transmittance of both Zn2SnO4 and ZnSnO3 films is over 80% in the range of 400 ~ 900nm.关键词
Zn2SnO4/ZnSnO3/溶胶-凝胶法/导电性/透明性Key words
Zn2SnO4/ZnSnO3/Sol-Gel/conductivity/transparency分类
数理科学引用本文复制引用
季伶俐,贺蕴秋,孙芳芳..Zn-Sn-O系统透明导电薄膜的制备及其性能[J].材料科学与工程学报,2012,30(1):63-70,101,9.基金项目
国家自然科学基金资助项目（50672066 （）
51175162） （）
