材料科学与工程学报2012，Vol.30Issue(2)：241-244,266,5.
大气压非平衡等离子体沉积氧化硅薄膜
Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films
摘要
Abstract
A non-equilibrium atmospheric-pressure plasma jet was developed.A kinetic controlling system was integrated to control the movement of plasma jet,which was used to deposit silicon oxide films.TEOS was used as the precursor.N2 gas was used to generate plasma and carry precursor.Substrate temperature was varied from 50℃ to 300℃.As-deposited films were characterized by ellipsometrry,Fourier transform infrared（FTIR） spectroscopy,scanning electron microscopy（SEM） and nano-indentometry.FTIR spectra indicate that there are a majority of Si-O-Si bonds and a minority of Si-OH bonds in the as-deposited films.Higher substrate temperature is contributive to depositing flat and compact films.Under substrate temperature 300℃,film hardness is up to 4.8GPa,which is slightly less than that of films deposited by plasma enhanced chemical vapor deposition（PECVD）.关键词
氧化硅薄膜/非平衡等离子体枪/大气压/氮气/四乙氧基硅烷/基底温度Key words
Silicon oxide films/non-equilibrium plasma jet/atmospheric pressure/nitrogen/TEOS/substrate temperature分类
通用工业技术引用本文复制引用
林江,张溪文,韩高荣..大气压非平衡等离子体沉积氧化硅薄膜[J].材料科学与工程学报,2012,30(2):241-244,266,5.基金项目
浙江大学基本科研业务费专项资助项目 （）
