重庆邮电大学学报（自然科学版）2012，Vol.24Issue(2)：212-216,221,6.DOI:10.3979/j.issn.1673-825X.2012.02.017
980nm应变量子阱激光器外延层工艺参数的优化设计
Optimal design of epitaxial layer technological parameter of 980 nm strained quantum well lasers
张莹 1宋爱民 2王培界3
作者信息
- 1. 重庆邮电大学光电工程学院,重庆400065
- 2. 重庆教育学院图书馆,重庆400067
- 3. 重庆光电技术研究所,重庆400060
- 折叠
摘要
Abstract
In this paper, optimal design of epitaxial layer technological parameters of 980nm strained quantum well lasers is introduced. Through the theoretical calculations and the software simulation, the structure of quantum well structure is optimized, and the Al composition in the waveguide layer and packet layer on the efficiency of quantum well laser is learned. The laser is grown by metal organic chemical vapor deposition (MOCVD) based on the optimization results. The results of the experiment show that, when the operating current is 1 A, the threshold current is 150 mA, the slope efficiency is 0. 48 W/A( 150 μm × 500 μm, uncoated devices) , and the output power is 400 mW.关键词
单量子阱/压应变/Al组分/金属有机化合物化学气相淀积(MOCVD)/转换效率Key words
single quantum well(SQW)/compressive strained/Al composition/metal organic chemical vapor deposition (MOCVD)/conversion efficiency分类
信息技术与安全科学引用本文复制引用
张莹,宋爱民,王培界..980nm应变量子阱激光器外延层工艺参数的优化设计[J].重庆邮电大学学报（自然科学版）,2012,24(2):212-216,221,6.
