东南大学学报（自然科学版）2012，Vol.42Issue(2)：234-238,5.DOI:10.3969/j.issn.1001-0505.2012.02.008
SOI双槽隔离结构的耐压特性
Breakdown characteristic of SOI trench structure
摘要
Abstract
The breakdown model of double trench isolation structure on silicon on insulator (SOI) wafer is proposed. This model indicates that the imbalance of the voltage drop at isolation oxide layers of the double trench isolation structure leads the isolation oxide layer near the high voltage region to break down in advance, making the critical breakdown voltage less than the theoretical value. Furthermore, increasing the trench aspect ratio and decreasing the trench spacing can weaken the imbalance of the voltage drop and improve the critical breakdown voltage of the double trench isolation structure on SOI wafer. The simulation results by Sentaurus device simulation software and the experiment results on CSMC 0.5 μm 200 V SOI process platform from Central Semiconductor Manufacturing Technologies Fabl Co. , Ltd. Show that decreasing the trench spacing and increasing the trench aspect ratio are the effective way to improve the critical breakdown voltage of the double trench isolation structure on SOI wafer. The results also prove the validity of the proposed model.关键词
双槽隔离结构/耐压模型/压降不均衡/沟槽纵横比/槽间距/临界击穿电压Key words
double trench isolation structure/ breakdown model/ imbalance of voltage drop/ trench aspect ratio/ trench spacing/ critical breakdown voltage分类
信息技术与安全科学引用本文复制引用
陈健,朱奎英,刘斯扬,钱钦松,孙伟锋..SOI双槽隔离结构的耐压特性[J].东南大学学报（自然科学版）,2012,42(2):234-238,5.基金项目
江苏省自然科学基金资助项目(BK2011059). （BK2011059）
