电子器件2012，Vol.35Issue(2)：125-129,5.DOI:10.3969/j.issn.1005-9490.2012.02.003
不同溅射气体对a-IGZO TFT特性的影响
Effect of Various Sputtering Gas on the Characteristics of a-IGZO TFT
张耿 1王娟 2向桂华 3蔡君蕊 3孙庆华 4赵伟明3
作者信息
- 1. 东莞宏威数码机械有限公司,广东东莞523080
- 2. 中山大学理工学院,广州510275
- 3. 东莞有机发光显示产业技术研究院,广东东莞523080
- 4. 东莞彩显有机发光科技有限公司,广东东莞523080
- 折叠
摘要
Abstract
Based on different IGZO TFTs have been studied and the IGZO films were deposited using Pulsed DC sputtering method with various single-component sputtering gases( Ar,O2 ,and N2), including lack-oxygen( Ar) ,rich-oxygen (O2) ,oxygen-replacement(N2)types. By employing the AES,XRD,AFM analysis methods,the composition and miero-structure of the IGZO films and the corresponding target cross sections were investigated. It indicates that the sputtering gases affect significantly on the properties of the LGZO films. The results show that afVer annealing, Ar-5GZO TFT has good characteristics,such as S slope 1 V/dec,mobility 8.3 cm2/Vs,Ion/Ioff≧l05.关键词
薄膜晶体管/IGZO膜/溅射气体/脉冲直流Key words
Thin Film Transistor (TFT)/IGZO film/ Sputtering gas/ Pulsed DC分类
信息技术与安全科学引用本文复制引用
张耿,王娟,向桂华,蔡君蕊,孙庆华,赵伟明..不同溅射气体对a-IGZO TFT特性的影响[J].电子器件,2012,35(2):125-129,5.
