发光学报2012，Vol.33Issue(6)：581-585,5.DOI:10.3788/fgxb20123306.0581
初始化生长条件对a-GaN中应变的影响
Effect of Initial Growth Conditions on The Strain in a-plane GaN
摘要
Abstract
The effect of nitridation treatment and the low temperature (LT) A1N buffer on structure and strain of a-plane GaN epilayers grown on r-plane sapphire by low pressure metalorganic chemical vapor deposition ( LP-MOCVD) has been investigated by high resolution X-ray diffraction (HRXRD) and polarized Raman scattering spectra in backscattering configurations. For the sample using the LT-A1N buffer, the full widths at half maximum ( FWHM) of X-ray rocking curves (XRC) and the strain of a-plane GaN are lower comparing with that of the sample with nitridation, which is consistent with the smaller in-plane stress anisotropic distribution in a-plane GaN epilayers with LT-A1N buffer.关键词
a-GaN/各向异性/拉曼散射光谱/残余应变Key words
a-GaN/ anisotropic/ Raman spectroscopy/ strain分类
数理科学引用本文复制引用
贾辉,陈一仁,孙晓娟,黎大兵,宋航,蒋红,缪国庆,李志明..初始化生长条件对a-GaN中应变的影响[J].发光学报,2012,33(6):581-585,5.基金项目
国家基础研究发展计划(2011CB301901) （2011CB301901）
国家自然科学基金(51072196,51072195) （51072196,51072195）
"863"计划(2011AA03A111)资助项目 （2011AA03A111）
