发光学报2012，Vol.33Issue(6)：596-600,5.DOI:10.3788/fgxb20123306.0596
富硅氮化硅薄膜的制备及其光学带隙研究
Preparation and Optics Band Gap Characterization of Si-rich Silicon Nitride Thin Films
摘要
Abstract
Silicon nitride ( SiN,) thin films were deposited by bipolar pulse reactive magnetron sputtering technique with different experiment parameters. Digital microscope and UV-Vis spectroscopy were used to study the surface structure and optics band gaps of the films. Confocal microscopy Raman spectrometer was used to study the Raman spectra of the silicon substrate, the as-deposited films and the annealed films. It is found that the films are Si-rich SiN, films and the most important influence factor on optics band gaps is the flow of nitrogen. The results of the Raman investigation show that the amorphous and crystalline silicon peaks appear in the film. After annealing, the amorphous silicon peaks were weakened or disappeared. It indicates that the crystallization appears in the film apparently. The shift of crystalline silicon peaks shows that silicon nanocrystals appear in the film, and the average size is about 6. 6 nm.关键词
富硅氮化硅薄膜/磁控溅射/紫外-可见光光谱/拉曼光谱/光学带隙Key words
SiNf/ reactive magnetron sputtering/ UV-Vis speclroseopy/ Raman spectra/ optic9 band gaps分类
能源科技引用本文复制引用
林娟,杨培志,化麒麟..富硅氮化硅薄膜的制备及其光学带隙研究[J].发光学报,2012,33(6):596-600,5.基金项目
国家自然科学基金联合基金(U1037604)资助项目 （U1037604）
