发光学报2012，Vol.33Issue(6)：640-646,7.DOI:10.3788/fgxb20123306.0640
852nm半导体激光器InGaAlAs、InGaAsP、InGaAs和GaAs量子阱的温度稳定性
Temperature Stability of InGaAlAs, InGaAsP,InGaAs and GaAs Quantum-wells for 852 nm Laser Diode
摘要
Abstract
In order to enhance the temperature stability of 852 nm laser diode, the gain of InGaAlAs, InGaAsP, InGaAs and GaAs quantum-wells were calculated by a comprehensive model theory, and the peak gain and wavelength versus operation temperature for the six different quantum-wells were compared and discussed. The results indicate that In0.13Ga0.74Al0.11 As quantum-well is the most appropriate candidate for 852 nm laser diode when the higher gain and better temperature stability demanded simultaneously. Compressive-strained In0.15 Ga0.74 Al0.11 As single quantum-well 852 nm laser diode was grown by metal-organic chemical vapor deposition ( MOCVD). The wavelength shift with temperature for 852 nm laser diode is 0.256 nm/K, the experimental results are in good agreement with theoretical calculation results.关键词
激光器/AlGaInAs/量子阱/数值模拟Key words
lasers/ AlGalnAs/ quantum-well/ numerical simulation分类
信息技术与安全科学引用本文复制引用
徐华伟,宁永强,曾玉刚,张星,秦莉,刘云,王立军..852nm半导体激光器InGaAlAs、InGaAsP、InGaAs和GaAs量子阱的温度稳定性[J].发光学报,2012,33(6):640-646,7.基金项目
国家自然科学基金(10974012,11074247,61106047,61176045,61106068,51172225,61006054) （10974012,11074247,61106047,61176045,61106068,51172225,61006054）
国家自然科学基金重点项目(90923037)资助项目 （90923037）
