发光学报2012，Vol.33Issue(6)：647-650,4.DOI:10.3788/fgxb20123306.0647
1.06μm InGaAs/InGaAsP量子阱半导体激光器的温度特性
Temperature Characteristic of 1.06 μm InGaAs/InGaAsP Quantum Well Laser Diode
摘要
Abstract
The temperature characteristic of 1.06 u,m InGaAs/InGaAsP quantum well laser diode was studied. The output optical power, threshold current, conversion efficiency and spectra of the module were measured and analyzed when the module was operated with different current at different temperature. The results show that the module's characteristic changes with the temperature in the range of 15 ℃ to 55 ℃. The module's CW output optical power reduced from 40. 7 W to 29.4 W. The threshold current increased from 9. 29 A to 17. 24 A. The conversion efficiency reduced from 54.22% to 37. 55%. The lasing wavelength shift is 0. 37 nm/T and the characteristic temperature is 68.6 K. The temperature of the device in the actual application process should be controlled in the range of 15 °C to 25 °C to maintain the stability of the device performance.关键词
半导体激光器/1.06μm/阈值电流/温度特性Key words
semiconductor laser/ 1.06 nm/ threshold current/ temperature characteristic分类
信息技术与安全科学引用本文复制引用
李再金,芦鹏,李特,曲轶,薄报学,刘国军,马晓辉..1.06μm InGaAs/InGaAsP量子阱半导体激光器的温度特性[J].发光学报,2012,33(6):647-650,4.基金项目
国家自然科学基金(61107054) （61107054）
吉林省科技发展计划(201201124)资助项目 （201201124）
