发光学报2012，Vol.33Issue(6)：665-668,4.DOI:10.3788/fgxb20123306.0665
MOCVD法生长ZnO薄膜时氧源t-BuOH和H2O的比较研究
Comparison The Effect of t-BuOH and H2O as O Precursors on ZnO Films Grown by MOCVD Method
摘要
Abstract
The behaviors of ZnO films using t-BuOH and as oxygen precursors were investigated. Despite the fact that both t-BuOH and H20O are of lower activity, the ZnO epilayer has a higher growth rate when t-BuOH is used as oxygen precursor, due to its more effective prevention of the gas phase pre-reaction. Compared with H2O, ZnO epilayer get a better crystal quality by using t-BuOH as oxygen precursor. And the Hall mobility up to 37. 0 cm2 · V-1 · s-1 is achieved in the flim where t-BuOH is used as oxygen precursor. The research shows that t-BuOH is more suitable for oxygen precursor of the MOCVD growth of ZnO epilayer.关键词
ZnO/MOCVD/氧源/t-BuOHKey words
ZnO/ MOCVD/ 0 precursor/ t-BuOH分类
信息技术与安全科学引用本文复制引用
朱顺明,黄时敏,顾书林,朱振邦,顾然,郑有炓..MOCVD法生长ZnO薄膜时氧源t-BuOH和H2O的比较研究[J].发光学报,2012,33(6):665-668,4.基金项目
国家自然科学基金(61025020,60990312) （61025020,60990312）
国家"973"计划(2011CB302003) （2011CB302003）
江苏省自然科学基金(SBK201121728)资助项目 （SBK201121728）
