硅酸盐学报2012，Vol.40Issue(3)：436-442,7.
中子辐照6H-SiC晶体的退火特性及缺陷观测
Annealing Behavior and Observation for Defects in Neutron-Irradiated 6H-SiC Crystals
阮永丰 1黄丽 1王鹏飞 1马鹏飞 1贾敏 1祝威1
作者信息
摘要
Abstract
The annealing characteristic of neutron-irradiated 6H-SiC crystals was analyzed by X-ray diffraction（XRD）.It was found that the full width at half maximum（FWHM） of the XRD peaks of the neutron-irradiated samples increased and recovered with in-creasing of the annealing temperature,showing a linear recovery law in the range of 700–1 230 ℃.Based on the law,a novel tem-perature measurement technique for the determination of high temperature and complicated temperature field was proposed.More-over,the dislocation defects for the unirradiated,irradiated and post-irradiation annealed samples were investigated by using KOH added K2CO3 as a chemical etchant.The change trends of dislocation area ratio in the irradiated sample with the annealing tempera-ture almost agreed with that of FWHM,indicating that the dislocations induced by neutron irradiation could be one of important fac-tors for the changes of FWHM due to the thermal annealing treatment.关键词
碳化硅晶体/中子辐照/退火/位错Key words
silicon carbide crystal/neutron irradiation/annealing/dislocation分类
数理科学引用本文复制引用
阮永丰,黄丽,王鹏飞,马鹏飞,贾敏,祝威..中子辐照6H-SiC晶体的退火特性及缺陷观测[J].硅酸盐学报,2012,40(3):436-442,7.
