航空材料学报2012，Vol.32Issue(2)：82-86,5.DOI:10.3969/j.issn.1005-5053.2012.2.015
TiO2基紫外探测器的制备及退火工艺对光电性能的影响
Preparation of TiO2 UV Detector and Effect of Annealing Process on Photoelectronic Properties
摘要
Abstract
TiO2 UV detector with excellent photoelectronic properties was prepared by RF magnetron sputtering and suitable annealing process. The effect of annealing process on the photoelectronic properties of TiO2 UV detector was investigated using SEM, XRD, and the detection of photoelectronic properties. It was found that the grain size of TiO2 was increased with the increase of annealing temperature , and the change of the photoelectronic properties of TiO2 UV detector is caused by the variation of the number of grain boundary and defect. After treated at 500℃ for 2 h, the photocurrent was nearly 2.5 orders of magnitude higher than the darkcurrent and the optical response at ultraviolet range was nearly 2 orders of magnitude higher than that at visible light region. The high sensitivity and visible blind properties of obtained UV detector had been achieved.关键词
TiO2/紫外探测器/退火工艺/光电性能Key words
TiO2/ UV detector/ annealing process/ photoelectronic property分类
信息技术与安全科学引用本文复制引用
祁洪飞,刘大博..TiO2基紫外探测器的制备及退火工艺对光电性能的影响[J].航空材料学报,2012,32(2):82-86,5.
