激光技术2012，Vol.36Issue(2)：200-203,4.DOI:10.3969/j.issn.1001-3806.2012.02.014
基质刻蚀的高功率外腔面发射激光器
Substrate-etched high power external-cavity surface-emitting lasers
摘要
Abstract
To decrease the thermal effect of a vertical-external-cavity surface-emitting laser and increase its output power, a high thermal conductivity SiC heatspreader was bond on the reverse-order semiconductor wafer with the capillary method, and then the substrate was removed by means of chemical etch. The characteristics of the laser formed by the substrate-etched wafer were experimentally studied. When the active region in the gain structure is InGaAs/AlGaAs multiple quantum wells, the pump source is a fiber-coupled 808nm diode laser, and the transmission of the output coupler is 3% at laser wavelength, the TEM00 mode output power of 0. 52W and the optical-to-optical conversion efficiency of 20% are obtained at room temperature. The laser wavelength is 1018nm, and the spectrum width is 2nm(full width half maximum) . The measured M2 factor in x and y direction of 1. 01 and 1. 00 demonstrate the near diffraction-limited Gaussian beam of the laser. It can be concluded that the substrate-etching technology can significantly improve the thermal property of vertical-external-cavity surface-emitting lasers and results in high power and high beam quality.关键词
激光器/外腔面发射激光器/多量子阱/基质刻蚀/光抽运Key words
lasers/ external-cavity surface-emitting laser/ multiple quantum well/ substrate-etched/ optically-pumped分类
信息技术与安全科学引用本文复制引用
伍瑜,倪演海,戴特力,周勇,秦莉,梁一平,范嗣强,张鹏..基质刻蚀的高功率外腔面发射激光器[J].激光技术,2012,36(2):200-203,4.基金项目
重庆市高校创新团队建设计划资助项目(201013) （201013）
重庆市高校光学工程重点实验室资助项目(0705) （0705）
重庆师范大学博士启动基金资助项目(11XLB014) （11XLB014）
