南通大学学报：自然科学版2012，Vol.11Issue(1)：1-5,5.
基于硅纳米线缺陷辅助隧穿肖特基二极管研究
Study on Trap-Assisted Tunneling Schottky Diode Based on Silicon Nanowires
摘要
Abstract
The Schottky diodes of Platinum（Pt） thin film on p-silicon nanowires（p-SiNWs） tips are fabricated.The current-transport mechanism of Pt/p-SiNWs is defect-assisted tunneling（TU）.The experimental I-V data is measured and fitted to the analytical expressions of the thermionic emission（TE）,generation-recombination（GR）,TU,and leakage（RL） current-transport mechanisms in the temperature range of 300~370 K and voltage range of-1~1 V.The TU fitting data is in an excellent agreement with the experimental data.Meanwhile,the main characteristic parameters of Schottky are calculated based on the experimental data.Ideality factor n decreases with increasing temperature.The zero-barrier height Φb0increases with increasing temperature and the tunneling parameter E0 is independent of the temperature,which all are closely followed the TU current-transport mechanism.Hence,those results indicate that defect-assisted tunneling is dominant current-transport mechanism in Pt/p-SiNWs Schottky diodes.关键词
硅纳米线/缺陷辅助隧穿/肖特基二极管/电流传输Key words
silicon nanowires/defect-assisted tunneling/Schottky diodes/current-transport分类
信息技术与安全科学引用本文复制引用
王志亮,张健..基于硅纳米线缺陷辅助隧穿肖特基二极管研究[J].南通大学学报：自然科学版,2012,11(1):1-5,5.基金项目
国家自然科学基金项目 （）
上海市教委创新计划项目 （）
江苏省高校自然科学研究项目 （）
南通大学自然科学基金项目 （）
