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短脉冲激光对硅基探测器的热作用模型选择

郝向南 聂劲松 李化 卞进田

强激光与粒子束2012,Vol.24Issue(2):285-288,4.
强激光与粒子束2012,Vol.24Issue(2):285-288,4.DOI:10.3788/HPLPB20122402.0285

短脉冲激光对硅基探测器的热作用模型选择

Selection of heat transfer model for describing short-pulse laser heating silica-based sensor

郝向南 1聂劲松 1李化 1卞进田1

作者信息

  • 1. 解放军电子工程学院脉冲功率激光技术国家重点实验室,合肥230037
  • 折叠

摘要

Abstract

The fundamental equations of Fourier heat transfer model and non-Fourier heat transfer model were numerically solved, with the finite difference method. The relative changes between temperature curves of the two heat transfer models were analyzed under laser irradiation with different pulse widths of 10 ns, 1 ns, 100 ps, 10 ps. The impact of different thermal relaxa-tion time on non-Fourier model results was discussed. For pulses of pulse width less than or equal to 100 ps irradiating silicon ma-terial, the surface temperature increases slowly and carrier effect happens, which the non-Fourier model can reflect properly. As for general material, when the pulse width is less than or equal to the thermal relaxation time of material, carrier effect occurs. In this case, the non-Fourier model should be used.

关键词

短脉冲激光/有限差分法/非傅里叶模型法/载流子效应/材料热弛豫时间

Key words

short-pulse laser/finite difference method/non-Fourier model/carrier effect/ thermal relaxation time/

分类

生物科学

引用本文复制引用

郝向南,聂劲松,李化,卞进田..短脉冲激光对硅基探测器的热作用模型选择[J].强激光与粒子束,2012,24(2):285-288,4.

基金项目

国家973计划项目 ()

强激光与粒子束

OA北大核心CSCDCSTPCD

1001-4322

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