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TiO2表面氧空位对Rup2P/TiO2/ITO薄膜电极光致电荷转移的影响

程辉 董江舟 巢晖 姚江宏 曹亚安

物理化学学报2012,Vol.28Issue(4):850-856,7.
物理化学学报2012,Vol.28Issue(4):850-856,7.DOI:10.3866/PKU.WHXB2012020111

TiO2表面氧空位对Rup2P/TiO2/ITO薄膜电极光致电荷转移的影响

Infection of Oxygen Vacancy at the TiO2 Surface for Film Electrode Rup2P/TiO2/ITO Photo-Induced Charge Transfer

程辉 1董江舟 2巢晖 2姚江宏 3曹亚安1

作者信息

  • 1. 南开大学物理科学学院,天津300071
  • 2. 南开大学泰达应用物理学院,弱光非线性光子学教育部重点实验室,天津300457
  • 3. 中山大学化学与化学工程学院,广州510275
  • 折叠

摘要

Abstract

The surface properties of TiO2-X (X=5, 10, 20, X=[NaOH] (in mol L"1)) samples prepared by modification of hydrolyzed TiCU were studied. The surface-sensitized Ru(phen)2(PIBH) (Rup2P) (phen= phenanthroline, PIBH=pyridyl benzimidazole hybrid) film electrodes Rup2P/TiO2-5/ITO (indium tin oxide), Rup2P/TiO2-10/ITO, and Rup2P/TiO2-20/ITO were prepared. Among the three films, the photovoltaic properties of Rup2P/TiO2-10/ITO were the best and those of Rup2P/TiO2-5/ITO were the worst. The band structures, and properties on the surfaces of Rup2P and the three TiO2 samples were analyzed using absorption spectra, surface photovoltage spectra, photoluminescence spectra, and photocurrent action spectra. The photo-induced charge transfer process was studied by cyclic voltammetry under irradiation and photocurrent action spectra. The results revealed the oxygen vacancy at the TiO2 surface was very important for the photo-induced charge transfer process of Rup2PffiO2-X/ITO. The photocurrent mechanism of Rup2P/TiO2-X/ITO is discussed.

关键词

Rup2P/TiO2/表面敏化/Rup2P/TiO2-X/ITO/光致电荷转移

Key words

Rup2P/ TiO2/ Surface-sensitization/ Rup2P/TiO2-X/ITO/ Photo-induced charge transfer

分类

化学化工

引用本文复制引用

程辉,董江舟,巢晖,姚江宏,曹亚安..TiO2表面氧空位对Rup2P/TiO2/ITO薄膜电极光致电荷转移的影响[J].物理化学学报,2012,28(4):850-856,7.

基金项目

国家自然科学基金(50872056,51072082,21173121,11074129)资助项目 (50872056,51072082,21173121,11074129)

物理化学学报

OA北大核心CSCDCSTPCD

1000-6818

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