物联网技术2012，Vol.2Issue(5)：61-63,3.
X波段GaN基微波功率放大器的设计
Research on X band GaN microwave power amplifier
魏涛1
作者信息
- 1. 电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054
- 折叠
摘要
Abstract
An X-band GaN power amplifier is developed. Bias networks, matching networks and stability networks are discussed, and power synthesis of six GaN HEMTs is conducted. By biasing the amplifier at VGS=-3.2 V, VDS=6 V and IDS=200 mA, the developed power amplifier has 20.380 dB maximum linear gain and has exhibited 35.268 dBm（about 3.36 W） power out at 8 GHz.关键词
GaN/HEMT/功率合成/X波段/功率放大器Key words
GaN HEMT/power synthesis/X-band/power amplifier分类
信息技术与安全科学引用本文复制引用
魏涛..X波段GaN基微波功率放大器的设计[J].物联网技术,2012,2(5):61-63,3.
