物理学报2012，Vol.61Issue(4)：356-360,5.
分子束外延生长[111]晶向CdTe的研究
Study of growth of [111]-oriented CdTe thin films by MBE
摘要
Abstract
In this study, CdTe（111） thin films were epitaxially grown on freshly cleaved BaF2 substrate using molecular beam epitaxy （MBE）. In situ characterization of reflection high energy electron diffraction （RHEED） reveals the growth mode of transition from 2D to 3D. XRD analysis results verify the single crystalline property of the as-grown films. Theoretical method is adopted to fit the measured near infrared transmission spectrum, revealing a CdTe energy gap of 1.511 eV at room temperature.关键词
CdTe/分子束外延（MBE）/RHEED/XRDKey words
CdTe/MBE/RHEED/XRD分类
信息技术与安全科学引用本文复制引用
张兵坡,蔡春锋,才玺坤,吴惠桢,王淼..分子束外延生长[111]晶向CdTe的研究[J].物理学报,2012,61(4):356-360,5.基金项目
国家自然科学基金（批准号：10974174和91021020）和浙江省自然科学基金（批准号：Z6100117,Z111057）资助的课题. （）
