物理学报2012，Vol.61Issue(4)：414-418,5.
AlGaN/GaN高电子迁移率晶体管中kink效应的半经验模型
A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor
摘要
Abstract
Kink effect is analyzed in AIGaN/GaN devices primarily,A semiempirical model is given by analyzing the kink effect on AIGaN/GaN high electron mobility transistor and by considering the relationship between V_（ds.kink） and gate voltage.Due to a little error between simulation results and measured data,this model can be used to identify the occurrence of kink effect and change in drain current.The analyses of experimental results and model simulation lead to a conclusion that impact ionization plays an important role in generating kink effect.关键词
AlGaN/GaN/高电子迁移率晶体管/kink效应/模型Key words
AlGaN/GaN/high electron mobility transistor/kink effect/model分类
信息技术与安全科学引用本文复制引用
马骥刚,马晓华,张会龙,曹梦逸,张凯,李文雯,郭星,廖雪阳,陈伟伟,郝跃..AlGaN/GaN高电子迁移率晶体管中kink效应的半经验模型[J].物理学报,2012,61(4):414-418,5.基金项目
国家重点基础研究发展计划（973计划）（批准号：2011CBA00606）资助的课题 （）
