物理学报2012，Vol.61Issue(4)：426-430,5.
新型高速半导体器件IMOS阈值电压解析模型
A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOS
摘要
Abstract
A threshold voltage model is created by analyzing differents distributions of surface electric field and the condition of avalanche breakdown,based on the structure of a novel high speed semiconductor device p-IMOS in this paper.Model verification is carried out using the 2D device simulator ISE.By analyzing the model,the dependences of threshold voltage on drain-source voltage,Si layer thickness and gate length are studied.The results of the model are in good agreement with experimental results and ISE simulation results.The proposed model can also be easily used for the reasonable analysis and the design of p-IMOS.关键词
IMOS/亚阈值摆幅/雪崩击穿/阈值电压Key words
IMOS/subthreshold swing/avalanche breakdown/threshold voltage分类
信息技术与安全科学引用本文复制引用
李妤晨,张鹤鸣,张玉明,胡辉勇,徐小波,秦珊珊,王冠宇..新型高速半导体器件IMOS阈值电压解析模型[J].物理学报,2012,61(4):426-430,5.基金项目
国家部委资助项目 （）
中央高校基本科研业务费 （）
陕西省自然科学基础研究计划资助项目（批准号：2010JQ8008）资助的课题 （）
