物理学报2012，Vol.61Issue(5)：390-397,8.
3MeV质子辐照对AlGaN/GaN高电子迁移率晶体管的影响
Effects of 3 MeV proton irradiations on AIGaN/GaN high electron mobility transistors
吕玲 1张进成 1李亮 1马晓华 1曹艳荣 1郝跃1
作者信息
- 1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071
- 折叠
摘要
Abstract
AlGaN/GaN high electron mobility transistors （HEMT） are exposed to 3 MeV protons irradiation. The drain saturation current decreases 20% and the maximum transconductance decreases 5% at a fluence of 1×10^15 protons/cm2. As fluence increases, the thread voltage is shifted toward more positive values. After proton irradiation, the gate leakage current increases. The degradation caused by 1.8 MeV proton is significantly higher than by 3 MeV proton irradiation at the same fluence. The radiation damage area and the density of vacancies at a given depth are obtained from software SRIM. As the energy of the incident proton increases, the non-ionizing energy transferred to the crystal lattice decreases. It is concluded that vacancies introduced by proton irradiation may be the primary reason for the degradations of electrical characteristics of AlGaN/GaN HEMT.关键词
质子辐照/AlGaN/GaN/HEMT/SRIM/空位密度Key words
proton irradiation/A1GaN/GaN HEMT/SRIM/vacancies density分类
信息技术与安全科学引用本文复制引用
吕玲,张进成,李亮,马晓华,曹艳荣,郝跃..3MeV质子辐照对AlGaN/GaN高电子迁移率晶体管的影响[J].物理学报,2012,61(5):390-397,8.
